Nanotechnology is often defined as technology where dimensions of a few nanometers (billionths of a meter) play a critical role. Our designs use one of two nano-scale spintronic structures: giant magnetoresistors (GMR) and spin-dependent tunnel (SDT) junctions. In GMR devices, the resistance changes due to conduction electrons scattering at interfaces within the devices.
The GMR effect is only significant if the layer thicknesses are less than the mean free path of conduction electrons, which is on the order of five nanometers. In awarding the 2007 Nobel Prize in Physics for GMR, the Nobel Committee said, GMR can be considered one of the first real applications of the promising field of nanotechnology. More.
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