How are the areas and perimeters of the source and drain being calculated? Is Dracula's junction capacitance extraction methodology consistent with ACM=3 defined in UMC's HSPICE model?

The above figure shows two transistors in series, and they share the same diffusion for the source and drain. With Dracula, a "NRX-EXTRACT" command can extract resistance values of both source and drain of the MOS. The MOS parameters in the output SPICE net_list will include L, W, AD, PD, AS, PS, NRS, and NRD.

The internal calculation function is described in Chapter 11 of the Dracula Reference. Users could also define their own PARSET to extract the area and perimeter of MOS source/drain with their own equations. More.

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